| PART |
Description |
Maker |
| ML64114R ML6XX14 ML60114R |
785 nm, LASER DIODE
From old datasheet system
AIGaAs LASER DIODES AIGaAs激光二极管
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| ML40123N |
AIGaAs LASER DIODES
|
Mitsubishi Electric Corporation
|
| ML6701A ML6411A ML6411C ML6101A |
AIGaAs Laser Diodes emitting light beams around 780nm wavelength
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ML6101A ML6411A |
(ML6101A - ML6701A) AIGaAs Laser Diodes emitting light beams around 780nm wavelength
|
Mitsubishi Electric
|
| HLMP-K105 HLMP-K101 HLMP-D101A HLMP-D105A |
DOUBLE HETEROJUNCTION AIGAAS HIGH INTENSITY RED LED LAMPS T-1 3/4 SINGLE COLOR LED, HIGH INTENSITY RED, 5 mm
DOUBLE HETEROJUNCTION AIGAAS HIGH INTENSITY RED LED LAMPS T-1 SINGLE COLOR LED, HIGH INTENSITY RED, 3 mm
|
QT[QT Optoelectronics]
http://
|
| SLU301VR-2-01 SLU301VR-1-02 SLU301VR-24-02 SLU301V |
810 nm, LASER DIODE
785 nm, LASER DIODE
807 nm, LASER DIODE
798 nm, LASER DIODE
|
|
| Q62702-P358 Q62702-P1617 SPL_CG SPLCG85 SPLCG98 SP |
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 850 nm, LASER DIODE
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 激光二极管W连续类激光产品的Submount 1.0
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX7537BF-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7437 |
LASER DIODE 1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
